ROHM Semiconductor
BST400D12P4A101
MOSFET Modules half-bridge module consisting of SiC-MOSFETs, suitable for Automotive application, Inverter, Converter, and (Hybrid) electrical vehicles EV/HEV.
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET Modules
- Mounting Style
- Press Fit
- Packaging
- Bulk
Technical Specifications
19 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 394 A
- Rds On - Drain-Source Resistance
- 8.6 mOhms
- Vgs - Gate-Source Voltage
- - 4 V, + 21 V
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 1.667 kW
- Configuration
- Dual
Show more parameters (7)
- Country of Origin
- JP
- Fall Time
- 42 ns
- Product
- Power Module
- Rise Time
- 102 ns
- Tradename
- EcoSiC
- Typical Turn-Off Delay Time
- 198 ns
- Typical Turn-On Delay Time
- 119 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.