EPC
EPC2307
GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
Basic Information
View Datasheet ↗- Manufacturer
- EPC
- Product Category
- GaN FETs
- Package
- QFN-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
19 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 63 A
- Rds On - Drain-Source Resistance
- 10 mOhms
- Vgs - Gate-Source Voltage
- 6 V, - 4 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 10.1 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Channel Mode
- Enhancement
- Tradename
- eGaN FET
Show more parameters (7)
- Configuration
- Single
- Country of Origin
- MY
- Moisture Sensitive
- Yes
- Product
- Power Transistor
- Technology
- GaN
- Transistor Type
- 1 N-Channel
- Unit Weight
- 0.001069 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.