IXYS
IXA70R1200NA
IGBT Modules DISC IGBT XPT-GENX3 (MINI
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Package
- SOT-227B-4
- Mounting Style
- Screw Mount
- Packaging
- Tube
Technical Specifications
11 parameters- Product
- IGBT Silicon Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.8 V
- Continuous Collector Current at 25 C
- 100 A
- Gate-Emitter Leakage Current
- 500 nA
- Pd - Power Dissipation
- 350 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.