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Central Semiconductor

CEDM8004VL TR

MOSFET P-Ch Enh Mode FET 30V 8.0VGS 450mA

Basic Information

View Datasheet ↗
Manufacturer
Central Semiconductor
Product Category
MOSFET
Series
CEDM80
Package
SOT-883VL
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

21 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
450 mA
Rds On - Drain-Source Resistance
1 Ohms
Vgs th - Gate-Source Threshold Voltage
1 V
Vgs - Gate-Source Voltage
8 V
Qg - Gate Charge
880 pC
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
100 mW
Show more parameters (9)
Configuration
Single
Channel Mode
Enhancement
Height
0.32 mm
Length
1.05 mm
Product
MOSFET
Transistor Type
1 P-Channel
Width
0.65 mm
Forward Transconductance - Min
200 mS
Part # Aliases
CEDM8004VL PBFREE TR

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CEDM8004VL TR Specifications and Datasheet | ChipSourceHub