ON Semiconductor / Fairchild
KSB834WYTM
Bipolar Transistors - BJT PNP Epitaxial Sil
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- KSB834W
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 60 V
- Collector- Base Voltage VCBO
- - 60 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 0.5 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 9 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200
- Height
- 4.83 mm
Show more parameters (6)
- Length
- 10.67 mm
- Width
- 9.65 mm
- Continuous Collector Current
- - 3 A
- DC Collector/Base Gain hfe Min
- 60
- Pd - Power Dissipation
- 30 W
- Unit Weight
- 0.046296 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.