SemiQ
GCMX003A120S3B1-N
MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- MOSFET Modules
- Series
- GCMX
- Package
- S3
- Mounting Style
- Screw Mount
- Packaging
- Bulk
Technical Specifications
23 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 625 A
- Rds On - Drain-Source Resistance
- 5.5 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.113 kW
- Country of Assembly
- US
Show more parameters (11)
- Country of Origin
- US
- Fall Time
- 28 ns
- Height
- 30 mm
- Length
- 106.4 mm
- Product
- Modules
- Rise Time
- 21 n
- Type
- Half Bidge Module
- Typical Turn-Off Delay Time
- 138 ns
- Typical Turn-On Delay Time
- 79 ns
- Vf - Forward Voltage
- 4 V
- Width
- 61.4 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.