MACOM
PTAB182002FC-V1-R0
RF MOSFET Transistors RF LDMOS FET
Basic Information
- Manufacturer
- MACOM
- Product Category
- RF MOSFET Transistors
- Package
- H-37248-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
12 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Rds On - Drain-Source Resistance
- 150 mOhms
- Operating Frequency
- 1.805 GHz to 1.88 GHz
- Gain
- 15.5 dB
- Output Power
- 190 W
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- US
- Number of Channels
- 2 Channel
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- + 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.