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STMicroelectronics

RF3L05200CB4

RF MOSFET Transistors 200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
RF MOSFET Transistors
Package
LBB-3
Mounting Style
Through Hole
Packaging
Reel

Technical Specifications

8 parameters
Transistor Polarity
N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
28 V
Operating Frequency
945 MHz
Gain
16 dB
Output Power
200 W
Number of Channels
1 Channel
Type
RF Power MOSFET

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RF3L05200CB4 Specifications and Datasheet | ChipSourceHub