NXP Semiconductors
MRF101BN
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRF101
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 8.8 A
- Vds - Drain-Source Breakdown Voltage
- 133 V
- Gain
- 21.1 dB
- Output Power
- 100 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.8 MHz to 250 MHz
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 7.1 S
- Number of Channels
- 1 Channel
Show more parameters (4)
- Pd - Power Dissipation
- 182 W
- Vgs - Gate-Source Voltage
- - 6 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.7 V
- Part # Aliases
- 935377234129
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.