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Optek / TT Electronics

HCT7000MTX

MOSFET N-Channel Enhncmnt Mode Trans

Basic Information

View Datasheet ↗
Manufacturer
TT Electronics
Brand
Optek / TT Electronics
Product Category
MOSFET
Packaging
Bulk
RoHS
E

Technical Specifications

15 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
200 mA
Rds On - Drain-Source Resistance
5 Ohms
Vgs th - Gate-Source Threshold Voltage
800 mV
Vgs - Gate-Source Voltage
40 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
300 mW
Configuration
Single
Show more parameters (3)
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Forward Transconductance - Min
0.1 S

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

HCT7000MTX Specifications and Datasheet | ChipSourceHub