Central Semiconductor
2N706A PBFREE
Bipolar Transistors - BJT NPN Fast SW SS
Basic Information
- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
10 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 50 mA
- Collector- Emitter Voltage VCEO Max
- 15 V
- Emitter- Base Voltage VEBO
- 5 V
- Pd - Power Dissipation
- 300 mW
- Continuous Collector Current
- 50 mA
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 20
- DC Current Gain hFE Max
- 60
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.