Infineon Technologies
FF4MR12W2M1HPB11ABPSA1
MOSFET Modules EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC / TIM
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET Modules
- Series
- CoolSiC
- Mounting Style
- Press Fit
- Packaging
- Tray
Technical Specifications
25 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 200 A
- Rds On - Drain-Source Resistance
- 6 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5.15 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 20 mW
- Configuration
- Dual
Show more parameters (13)
- Country of Assembly
- DE
- Country of Origin
- AT
- Fall Time
- 11 ns
- Height
- 12 mm
- Length
- 62.8 mm
- Product
- MOSFET Module
- Rise Time
- 47 ns
- Type
- CoolSiC Trench MOSFET
- Typical Turn-Off Delay Time
- 47 ns
- Typical Turn-On Delay Time
- 33 ns
- Vf - Forward Voltage
- 4.2 V
- Width
- 56.7 mm
- Part # Aliases
- FF4MR12W2M1HP_B11_A SP006049697
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.