Qorvo
QPD1020SR
RF MOSFET Transistors 2.7-3.5GHz 30W Gain 18.4dB
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF MOSFET Transistors
- Package
- DFN-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- GaN SiC
- Id - Continuous Drain Current
- 100 mA
- Vds - Drain-Source Breakdown Voltage
- 50 V
- Gain
- 18.4 dB
- Output Power
- 31 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Operating Frequency
- 2.7 GHz to 3.5 GHz
- Type
- RF Small Signal MOSFET
- Number of Channels
- 1 Channel
- Moisture Sensitive
- Yes
Show more parameters (2)
- Pd - Power Dissipation
- 30 W
- Vgs - Gate-Source Voltage
- - 2.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.