Qorvo
TGF2819-FL
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Mounting Style
- Screw Mount
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 14 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 32 V
- Vgs - Gate-Source Breakdown Voltage
- - 2.9 V
- Id - Continuous Drain Current
- 7.32 A
- Output Power
- 100 W
- Maximum Drain Gate Voltage
- 145 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 86 W
Show more parameters (7)
- Configuration
- Single
- Operating Frequency
- 3.5 GHz
- Operating Temperature Range
- - 40 C to + 85 C
- Type
- GaN SiC HEMT
- Development Kit
- TGF2819-FS/FL, EVAL BOARD
- Moisture Sensitive
- Yes
- Part # Aliases
- 1118709 772-TGF2819-FS-EVB1
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.