STMicroelectronics
STB18NM80
MOSFET N-channel 800 V MDMesh
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STB18NM80
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 17 A
- Rds On - Drain-Source Resistance
- 295 mOhms
- Qg - Gate Charge
- 70 nC
- Pd - Power Dissipation
- 190 W
- Tradename
- MDmesh
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.