NXP Semiconductors
A2G26H281-04SR3
RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF JFET Transistors
- Package
- NI-780S-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- E
Technical Specifications
13 parameters- Technology
- GaN
- Gain
- 14.2 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Vgs - Gate-Source Breakdown Voltage
- - 8 V, 0 V
- Output Power
- 50 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Dual
- Operating Frequency
- 2496 MHz to 2690 MHz
- Vgs th - Gate-Source Threshold Voltage
- - 2.3 V
- Part # Aliases
- 935332873128
Show more parameters (1)
- Unit Weight
- 0.164077 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.