ChipSourceHub

Wolfspeed / Cree

GTVA123501FA-V1-R0

RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 350W

Basic Information

View Datasheet ↗
Manufacturer
Cree, Inc.
Brand
Wolfspeed / Cree
Product Category
RF JFET Transistors
Package
H-37265J-2
Mounting Style
Flange Mount
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Transistor Type
HEMT
Technology
GaN SiC
Gain
18 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V
Id - Continuous Drain Current
15 A
Output Power
350 W
Operating Frequency
1.2 GHz to 1.4 GHz
Development Kit
LTN/GTVA123501FA-V1
Vgs th - Gate-Source Threshold Voltage
- 3 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

GTVA123501FA-V1-R0 Specifications and Datasheet | ChipSourceHub