Infineon Technologies
BGA7H1N6E6327XTSA1
RF Amplifier RF SILICON MMIC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Amplifier
- Package
- TSNP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Type
- LNA for LTE
- Technology
- SiGe
- Operating Frequency
- 2300 MHz to 2690 MHz
- P1dB - Compression Point
- - 1 dBm
- Gain
- 12.5 dB
- Operating Supply Voltage
- 3.3 V
- NF - Noise Figure
- 0.6 dB
- OIP3 - Third Order Intercept
- 6 dBm
- Operating Supply Current
- 4.7 mA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Input Return Loss
- 11 dB
Show more parameters (4)
- Isolation dB
- 21 dB
- Pd - Power Dissipation
- 60 mW
- Part # Aliases
- 7H1N6 BGA E6327 SP001109130
- Unit Weight
- 0.000032 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.