ON Semiconductor
NSVEMX1DXV6T1G
Bipolar Transistors - BJT SS DUAL NPN GEN PURP TSTR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- EMX1
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
8 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 50 V
- Emitter- Base Voltage VEBO
- 7 V
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 357 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.