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onsemi

NVXR22S90M2SPB

MOSFET Modules SIC 900V 6D MOSFET V-SSDC SPB

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFET Modules
Series
NVXR22S90M2SPB
Package
SSDC-39
Mounting Style
SMD/SMT
Packaging
Tray

Technical Specifications

17 parameters
Technology
SiC
Vds - Drain-Source Breakdown Voltage
900 V
Id - Continuous Drain Current
510 A
Rds On - Drain-Source Resistance
2.7 mOhms
Vgs - Gate-Source Voltage
- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage
2.7 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
900 W
Configuration
Module
Country of Origin
CN
Fall Time
48 ns
Show more parameters (5)
Rise Time
94 ns
Tradename
EliteSiC
Type
EliteSiC Power Module
Typical Turn-Off Delay Time
295 ns
Typical Turn-On Delay Time
106 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVXR22S90M2SPB Specifications and Datasheet | ChipSourceHub