Infineon Technologies
F3L420R12W4H7H11BPSA1
IGBT Modules Module with active Advanced Neutral Point Clamp topology and PressFIT / NTC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Mounting Style
- Press Fit
- Packaging
- Tray
Technical Specifications
12 parameters- Product
- Modules
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.65 V
- Gate-Emitter Leakage Current
- 100 nA
- Pd - Power Dissipation
- 20 mW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Country of Assembly
- DE
- Country of Diffusion
- AT
- Country of Origin
- AT
- Technology
- Si
- Part # Aliases
- F3L420R12W4H7_H11 SP006031911
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.