Vishay / Siliconix
SI4425FDY-T1-GE3
MOSFET P-Channel 30 V (D-S) MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- - 30 V
- Id - Continuous Drain Current
- - 18.3 A
- Rds On - Drain-Source Resistance
- 7.7 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 2.2 V
- Vgs - Gate-Source Voltage
- - 20 V, + 16 V
- Qg - Gate Charge
- 27 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
Show more parameters (6)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Fall Time
- 23 ns
- Rise Time
- 48 ns
- Typical Turn-Off Delay Time
- 29 ns
- Typical Turn-On Delay Time
- 22 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.