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IXYS

IXZR18N50A-00

RF MOSFET Transistors 500V 18A RF MOSFET, with ISOPLUS-247A package assembly

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
RF MOSFET Transistors
Series
IXZR18
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
19 A
Vds - Drain-Source Breakdown Voltage
500 V
Rds On - Drain-Source Resistance
370 mOhms
Output Power
350 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Type
RF Power MOSFET
Forward Transconductance - Min
6.7 S
Number of Channels
1 Channel
Qg - Gate Charge
42 nC
Show more parameters (2)
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4.6 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXZR18N50A-00 Specifications and Datasheet | ChipSourceHub