WeEn Semiconductors
BUJ303AD,118
Bipolar Transistors - BJT NPN power transistor
Basic Information
View Datasheet ↗- Manufacturer
- WeEn Semiconductors
- Product Category
- Bipolar Transistors - BJT
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 500 V
- Collector-Emitter Saturation Voltage
- 0.25 V
- Maximum DC Collector Current
- 5 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 35
- DC Collector/Base Gain hfe Min
- 10
- Pd - Power Dissipation
- 80 W
- Part # Aliases
- 934065688118
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.