IXYS
IXTN120P20T
MOSFET TrenchP Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXTN120P20
- Package
- SOT-227-4
- Mounting Style
- Chassis Mount
- Packaging
- Tube
Technical Specifications
6 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 106 A
- Rds On - Drain-Source Resistance
- 30 mOhms
- Unit Weight
- 1.058219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.