Nexperia
PMCPB5530X,115
MOSFET PMCPB5530X/HUSON6/REEL 7" Q1/T
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- MOSFET
- Package
- DFN-2020-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 5.3 A
- Rds On - Drain-Source Resistance
- 70 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 650 mV
- Qg - Gate Charge
- 14.4 nC, 8.1 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 8.33 W
- Configuration
- Dual
Show more parameters (7)
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Fall Time
- 16 ns
- Rise Time
- 15 ns
- Typical Turn-Off Delay Time
- 40 ns
- Typical Turn-On Delay Time
- 4 ns
- Unit Weight
- 0.000254 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.