ON Semiconductor
TIP112G
Darlington Transistors 2A 100V Bipolar Power NPN
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Darlington Transistors
- Series
- TIP110
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector- Base Voltage VCBO
- 100 V
- Maximum DC Collector Current
- 2 A
- Maximum Collector Cut-off Current
- 1000 uA
- Pd - Power Dissipation
- 2 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 15.75 mm
- Length
- 10.53 mm
Show more parameters (4)
- Width
- 4.83 mm
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 1000
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.