STMicroelectronics
SCT1000N170
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- SiC MOSFETs
- Series
- SCT1000N170
- Package
- HiP-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
17 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.7 kV
- Id - Continuous Drain Current
- 6 A
- Rds On - Drain-Source Resistance
- 1 Ohms
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Qg - Gate Charge
- 14 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 200 C
- Pd - Power Dissipation
- 120 W
- Channel Mode
- Enhancement
Show more parameters (5)
- Configuration
- Single
- Country of Assembly
- IT
- Country of Origin
- IT
- Technology
- SiC
- Transistor Type
- 1 N-Channel
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.