Wolfspeed / Cree
C3M0280090J-TR
MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- MOSFET
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- SiC
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 900 V
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 385 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Vgs - Gate-Source Voltage
- 18 V, - 8 V
- Qg - Gate Charge
- 9.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 50 W
Show more parameters (11)
- Configuration
- Single
- Channel Mode
- Enhancement
- Product
- Power MOSFET
- Type
- Silicon Carbide MOSFET
- Forward Transconductance - Min
- 3.1 S
- Fall Time
- 4 ns
- Moisture Sensitive
- Yes
- Rise Time
- 6.5 ns
- Typical Turn-Off Delay Time
- 11 ns
- Typical Turn-On Delay Time
- 10.5 ns
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.