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Semelab / TT Electronics

D2008UK

RF MOSFET Transistors Silicon DMOS RF FET 5W-28V-400MHz SE

Basic Information

View Datasheet ↗
Manufacturer
TT Electronics
Brand
Semelab / TT Electronics
Product Category
RF MOSFET Transistors
Package
TO-39-3
Mounting Style
Through Hole

Technical Specifications

16 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
2 A
Vds - Drain-Source Breakdown Voltage
65 V
Gain
13 dB
Output Power
5 W
Maximum Operating Temperature
+ 150 C
Configuration
Single
Height
4.95 mm
Length
9.4 mm
Operating Frequency
400 MHz
Type
RF Power MOSFET
Show more parameters (4)
Width
9.4 mm
Pd - Power Dissipation
29 W
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

D2008UK Specifications and Datasheet | ChipSourceHub