Vishay Semiconductors
SI6562CDQ-T1-BE3
MOSFETs TSSOP8 NPCH 20V 5.7A
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Package
- TSSOP-8
- Mounting Style
- SMD/SMT
- Packaging
- Bulk
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel, P-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 6.1 A, 6.7 A
- Rds On - Drain-Source Resistance
- 2 Ohms, 6 Ohms
- Vgs - Gate-Source Voltage
- - 12 V, 12 V
- Vgs th - Gate-Source Threshold Voltage
- 600 mV
- Qg - Gate Charge
- 15 nC, 34 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.6 W, 1.7 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Country of Origin
- TW
- Fall Time
- 10 ns, 15 ns
- Forward Transconductance - Min
- 17 S, 22 S
- Rise Time
- 10 ns, 25 ns
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Typical Turn-Off Delay Time
- 20 ns, 45 ns
- Typical Turn-On Delay Time
- 12 ns, 30 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.