Microchip Technology
TN0606N3-G
MOSFET 60V 1.5Ohm
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- MOSFET
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- 1 W
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 500 mA
- Rds On - Drain-Source Resistance
- 1.5 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 600 mV
- Vgs - Gate-Source Voltage
- 10 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1 W
- Configuration
- Single
Show more parameters (12)
- Channel Mode
- Enhancement
- Height
- 5.33 mm
- Length
- 5.21 mm
- Transistor Type
- 1 N-Channel
- Type
- FET
- Width
- 4.19 mm
- Forward Transconductance - Min
- 400 mS
- Fall Time
- 16 ns
- Rise Time
- 14 ns
- Typical Turn-Off Delay Time
- 16 ns
- Typical Turn-On Delay Time
- 6 ns
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.