ROHM Semiconductor
RGW50TS65DGC11
IGBTs 650V 25A Field Stop Trench IGBT
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- IGBTs
- Package
- TO-247N-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
13 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.9 V
- Maximum Gate Emitter Voltage
- - 30 V, 30 V
- Continuous Collector Current at 25 C
- 50 A
- Pd - Power Dissipation
- 156 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 25 A
- Country of Origin
- TH
- Gate-Emitter Leakage Current
- 200 nA
Show more parameters (1)
- Part # Aliases
- RGW50TS65D
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.