Vishay Semiconductors
SISS65DN-T1-GE3
MOSFETs -30V Vds -/+20V Vgs PowerPAK 1212-8S
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SISS
- Package
- PowerPAK-1212-8S-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 94 A
- Rds On - Drain-Source Resistance
- 4.6 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.3 V
- Qg - Gate Charge
- 138 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 65.8 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET, PowerPAK
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 18 ns
- Forward Transconductance - Min
- 62 S
- Rise Time
- 25 ns
- Typical Turn-Off Delay Time
- 45 ns
- Typical Turn-On Delay Time
- 20 ns
- Unit Weight
- 0.017231 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.