onsemi
UF3C065040K4S
SiC MOSFETs 650V/40MOSICFETG3TO247
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- SiC MOSFETs
- Series
- UF3C
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 54 A
- Rds On - Drain-Source Resistance
- 52 mOhms
- Vgs - Gate-Source Voltage
- - 25 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 43 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 326 W
- Channel Mode
- Enhancement
Show more parameters (6)
- Qualification
- AEC-Q101
- Tradename
- SiC FET
- Configuration
- Single
- Country of Origin
- PH
- Technology
- SiC
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.