Infineon Technologies
BFR843EL3E6327XTSA1
RF Bipolar Transistors RF BIP TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Package
- TSLP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 230
- Collector- Emitter Voltage VCEO Max
- 2.25 V
- Continuous Collector Current
- 55 mA
- Operating Frequency
- 12 GHz
- Pd - Power Dissipation
- 125 mW
- Part # Aliases
- 843EL3 BFR E6327 SP001062610
- Unit Weight
- 0.000017 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.