Infineon Technologies
IGD70R200D2SAUMA1
GaN FETs CoolGaN Transistor 700 V G5
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- GaN FETs
- Series
- CoolGaN G5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
26 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 700 V
- Rds On - Drain-Source Resistance
- 240 mOhms
- Vgs - Gate-Source Voltage
- - 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.6 V
- Qg - Gate Charge
- 1.3 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 21 W
- Channel Mode
- Enhancement
- Tradename
- CoolGaN
Show more parameters (14)
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- AT
- Country of Origin
- AT
- Fall Time
- 28 ns
- Moisture Sensitive
- Yes
- Product
- Transistors
- Rise Time
- 6 ns
- Technology
- GaN
- Transistor Type
- 1 N-Channel
- Type
- CoolGaN Transistor
- Typical Turn-Off Delay Time
- 9 ns
- Typical Turn-On Delay Time
- 7 ns
- Part # Aliases
- IGD70R200D2S SP006085337
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.