ON Semiconductor
EFC4C012NLTDG
MOSFET NCH 30V 30A WLCSP6 DUAL N-CHAN
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- MOSFET
- Package
- WLCSP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 19 A
- Rds On - Drain-Source Resistance
- 5 mOhms, 5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.3 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 18 nC, 18 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.5 W
- Configuration
- Dual
Show more parameters (6)
- Channel Mode
- Enhancement
- Transistor Type
- 2 N-Channel
- Fall Time
- 5.7 us, 5.7 us
- Rise Time
- 2 us, 2 us
- Typical Turn-Off Delay Time
- 26 us, 26 us
- Typical Turn-On Delay Time
- 2.7 us, 2.7 us
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.