Toshiba
SSM14N956L,EFF
MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFETs
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Rds On - Drain-Source Resistance
- 1.35 mOhms
- Vgs - Gate-Source Voltage
- - 8 V, 8 V
- Qg - Gate Charge
- 76 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.33 W
- Channel Mode
- Enhancement
- Configuration
- Dual
- Country of Origin
- JP
- Fall Time
- 2.1 us
Show more parameters (4)
- Rise Time
- 1.3 us
- Transistor Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 3.8 us
- Typical Turn-On Delay Time
- 1 us
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.