onsemi
NXH008P120M3F1PTG
MOSFET Modules 8M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFET Modules
- Series
- NXH008P120M3F1PTG
- Package
- PIM-18
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
23 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 145 A
- Rds On - Drain-Source Resistance
- 10.9 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage
- 4.4 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 382 W
- Configuration
- Single
Show more parameters (11)
- Country of Origin
- CN
- Fall Time
- 12 ns
- Height
- 12 mm
- Length
- 48 mm
- Rise Time
- 17 ns
- Tradename
- EliteSiC
- Type
- Half Bridge
- Typical Delay Time
- 17 ns
- Typical Turn-Off Delay Time
- 97 ns
- Typical Turn-On Delay Time
- 17 ns
- Width
- 33.8 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.