Infineon Technologies
FP75R12N2T7PB11BPSA1
IGBT Modules 1200 V, 25 A PIM IGBT module
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Mounting Style
- Through Hole
- Packaging
- Tray
Technical Specifications
12 parameters- Product
- IGBT Silicon Modules
- Configuration
- 3-Phase Inverter
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.55 V
- Continuous Collector Current at 25 C
- 75 A
- Gate-Emitter Leakage Current
- 100 nA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- HU
- Maximum Gate Emitter Voltage
- 20 V
- Technology
- Si
- Part # Aliases
- FP75R12N2T7P_B11 SP005595812
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.