NXP Semiconductors
A2T21H360-23NR6
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- OM-1230-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.4 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 5 V
- Gain
- 16.8 dB
- Output Power
- 63 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 2110 MHz to 2200 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Moisture Sensitive
- Yes
Show more parameters (4)
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 0.8 V
- Part # Aliases
- 935322358528
- Unit Weight
- 0.186807 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.