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Semelab / TT Electronics

D2013UK

RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-1GHz SE

Basic Information

View Datasheet ↗
Manufacturer
TT Electronics
Brand
Semelab / TT Electronics
Product Category
RF MOSFET Transistors
Package
DK
Mounting Style
SMD/SMT

Technical Specifications

13 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
4 A
Vds - Drain-Source Breakdown Voltage
65 V
Gain
10 dB
Output Power
20 W
Maximum Operating Temperature
+ 150 C
Configuration
Dual
Operating Frequency
1 GHz
Type
RF Power MOSFET
Pd - Power Dissipation
83 W
Vgs - Gate-Source Voltage
20 V
Show more parameters (1)
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

D2013UK Specifications and Datasheet | ChipSourceHub