Advanced Linear Devices
ALD110900APAL
MOSFET Dual EPAD(R) N-Ch
Basic Information
View Datasheet ↗- Manufacturer
- Advanced Linear Devices
- Product Category
- MOSFET
- Series
- ALD110900A
- Package
- PDIP-8
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 10 V
- Id - Continuous Drain Current
- 12 mA
- Rds On - Drain-Source Resistance
- 500 Ohms, 500 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 10 mV
- Vgs - Gate-Source Voltage
- 10.6 V
- Minimum Operating Temperature
- 0 C
- Maximum Operating Temperature
- + 70 C
- Pd - Power Dissipation
- 500 mW
- Configuration
- Dual
Show more parameters (7)
- Channel Mode
- Depletion
- Product
- MOSFET Small Signal
- Transistor Type
- 2 N-Channel
- Type
- MOSFET
- Typical Turn-Off Delay Time
- 10 ns
- Typical Turn-On Delay Time
- 10 ns
- Unit Weight
- 0.032805 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.