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ROHM Semiconductor

QS8J4TR

MOSFET TRANS MOSFET PCH 30V 4A 8PIN

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
MOSFET
Series
QS8J4
Package
TSMT-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Technology
Si
Number of Channels
2 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
4 A
Rds On - Drain-Source Resistance
40 mOhms, 40 mOhms
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
13 nC, 13 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.5 W
Configuration
Dual
Show more parameters (7)
Channel Mode
Enhancement
Transistor Type
2 P-Channel
Fall Time
50 ns, 50 ns
Rise Time
20 ns, 20 ns
Typical Turn-Off Delay Time
80 ns, 80 ns
Typical Turn-On Delay Time
8 ns, 8 ns
Part # Aliases
QS8J4

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

QS8J4TR Specifications and Datasheet | ChipSourceHub