ChipSourceHub

IXYS

IXFY4N60P3

MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFET
Series
IXFY4N60
Package
TO-252-3
Mounting Style
SMD/SMT
Packaging
Tube

Technical Specifications

7 parameters
Technology
Si
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
4 A
Rds On - Drain-Source Resistance
2.2 Ohms
Tradename
HiPerFET
Unit Weight
0.081130 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXFY4N60P3 Specifications and Datasheet | ChipSourceHub