IXYS
IXTH120P065T
MOSFET -120 Amps -65V 0.01 Rds
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXTH120P065
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Id - Continuous Drain Current
- 120 A
- Rds On - Drain-Source Resistance
- 10 mOhms
- Vgs - Gate-Source Voltage
- 15 V
- Qg - Gate Charge
- 58 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 298 W
- Configuration
- Single
Show more parameters (5)
- Transistor Type
- 1 P-Channel
- Forward Transconductance - Min
- 75 S
- Fall Time
- 21 ns
- Rise Time
- 28 ns
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.