Toshiba
TK6R8A08QM,S4X
MOSFETs UMOS10 TO-220SIS 80V 6.8mohm
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFETs
- Series
- UMOS X-H
- Package
- TO-220SIS-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Id - Continuous Drain Current
- 58 A
- Rds On - Drain-Source Resistance
- 6.8 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
- Qg - Gate Charge
- 39 nC
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 41 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Country of Origin
- CN
- Fall Time
- 46 ns
- Rise Time
- 39 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 82 ns
- Typical Turn-On Delay Time
- 54 ns
- Part # Aliases
- TK6R8A08QM,S4X(S
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.