STMicroelectronics
STGP6NC60HD
IGBT Transistors PowerMESH" IGBT
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Series
- STGP6NC60HD
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.9 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 15 A
- Pd - Power Dissipation
- 56 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 15 A
- Height
- 9.15 mm
- Length
- 10.4 mm
Show more parameters (4)
- Width
- 4.6 mm
- Continuous Collector Current
- 7 A
- Gate-Emitter Leakage Current
- 100 nA
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.