Infineon Technologies
IKB03N120H2
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Transistors
- Series
- IKB03N120
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Maximum Gate Emitter Voltage
- 20 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 9.6 A
- Height
- 4.4 mm
- Length
- 10.25 mm
- Width
- 9.9 mm
- Part # Aliases
- IKB03N120H2ATMA1 IKB3N12H2XT SP000014272
- Unit Weight
- 0.068654 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.